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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1200 400 625 800 V A A A TC=25C, Transistor Ptot 2500 W VGES +/- 20V V IF 400 A IFRM 800 A VR = 0V, t p = 10ms, T Vj = 125C 2 It 27,4 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 400A, V GE = 15V, Tvj = 25C IC = 400A, V GE = 15V, Tvj = 125C IC = 16mA, V CE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 t.b.d. 6,5 V V V VGE = -15V...+15V QG - 4,2 - C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 26 - nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25C VCE = 1200V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES - t.b.d. 20 500 - 500 400 nF A A nA IGES - prepared by: Mark Munzer approved by: Jens Thurau date of publication: 18.02.1999 revision: 1 1(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 400A, V CC = 600V VGE = 15V, RG = 2,2, Tvj = 25C VGE = 15V, RG = 2,2, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 400A, V CC = 600V VGE = 15V, RG = 2,2, Tvj = 25C VGE = 15V, RG = 2,2, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 400A, V CC = 600V VGE = 15V, RG = 2,2, Tvj = 25C VGE = 15V, RG = 2,2, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 400A, V CC = 600V VGE = 15V, RG = 2,2, Tvj = 25C VGE = 15V, RG = 2,2, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C IC = 400A, V CC = 600V, V GE = 15V RG = 2,2, Tvj = 125C, LS = 90nH IC = 400A, V CC = 600V, V GE = 15V RG = 2,2, Tvj = 125C, LS = 90nH tP 10sec, V GE 15V, R G = 2,2 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt ISC LsCE 2350 16 A nH Eoff 51 mWs Eon 38 mWs tf 0,06 0,09 s s td,off 0,54 0,59 s s tr 0,09 0,1 s s td,on 0,09 0,09 s s min. typ. max. RCC`+EE` - 0,5 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 400A, V GE = 0V, Tvj = 25C IF = 400A, V GE = 0V, Tvj = 125C IF = 400A, - di F/dt = 4100A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 400A, - di F/dt = 4100A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 400A, - di F/dt = 4100A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Erec 16 33 mWs mWs Qr 41 80 As As IRM 325 430 A A VF min. - typ. 1,8 1,7 max. 2,3 t.b.d. V V 2(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,010 max. 0,05 0,09 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight screw M5 M1 3 AL2O3 20 mm 11 mm 225 6 Nm terminals M6 terminals M4 G 2,5 1,1 300 5,0 2,0 Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V vorlaufige Daten preliminary data 800 700 Tj = 25C 600 500 Tj = 125C IC [A] 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 800 700 VGE = 17V VGE = 15V IC = f (VCE) T vj = 125C 600 500 VGE = 13V VGE = 11V VGE = 9V VGE = 7V IC [A] 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 800 700 Tj = 25C 600 500 Tj = 125C IC [A] 400 300 200 100 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 800 700 Tj = 25C IF = f (VF) 600 500 Tj = 125C IF [A] 400 300 200 100 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff = 2,2 , VCE = 600V, T j = 125C 140 Eoff Eon Erec 120 100 E [mJ] 80 60 40 20 0 0 80 160 240 320 400 480 560 640 720 800 IC [A] Schaltverluste (typisch) Switching losses (typical) 180 160 140 120 E [mJ] 100 80 60 40 20 0 0 2 4 6 Eoff Eon Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 400A , V CE = 600V , T j = 125C 8 10 12 14 RG [] 6(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) preliminary data 1 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 5,59 0,002 11,78 0,002 2 16,93 0,03 31,20 0,03 3 22,06 0,066 34,04 0,072 4 5,43 1,655 12,99 0,682 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 900 800 700 600 VGE = 15V, R g = 2,2 Ohm, T vj= 125C IC [A] 500 400 300 200 100 0 0 IC,Modul IC,Chip 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM400GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM400GA120DLC vorlaufige Daten preliminary data Single Switch 62 M6 28,5 13 23 16,1 22 o6,4 2 1 4 5 3 24 20 29 93 106,4 2 1 5 IS6 3 8(8) DB_BSM400GA120DLC_V.xls |
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